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中图分类法:
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TN430.2 版次： |
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中图分类法:
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TM13 版次： |
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著者:
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Voldman, Steven H., |
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题名:
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ESD : [ Circuits and devices /] / , |
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其它题名:
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Electrostatic discharge |
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版次:
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Second edition. |
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载体形态:
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xxvi, 520 pages : illustrations ; 25 cm. |
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内容提要:
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ESD: Circuits and Devices 2nd Edition provides a clear picture of layout and design of digital, analog, radio frequency (RF) and power applications for protection from electrostatic discharge (ESD), electrical overstress (EOS), and latchup phenomena from a generalist perspective and design synthesis practices providing optimum solutions in advanced technologies. New features in the 2nd edition: Expanded treatment of ESD and analog design of passive devices of resistors, capacitors, inductors, and active devices of diodes, bipolar junction transistors, MOSFETs, and FINFETs. Increased focus on ESD power clamps for power rails for CMOS, Bipolar, and BiCMOS. Co-synthesizing of semiconductor chip architecture and floor planning with ESD design practices for analog, and mixed signal applications Illustrates the influence of analog design practices on ESD design circuitry, |