中图分类法:
|
TN432-532 版次: |
题名:
|
Materials and devices for end-of-roadmap and beyond CMOS scaling [ symposium held April 5-9, 2010, San Francisco, California] / , |
出版发行:
|
出版地: Cambridge 出版社: Cambridge University Press 出版日期: 2014 |
载体形态:
|
162 p ill 24 cm |
附注:
|
"Contains papers presented at Symposium I, 'Materials for End-of-Roadmap Scaling of CMOS Devices' and Symposium J, 'Materials and Devices for Beyond CMOS Scaling' held April 5-9 at the 2010 MRS Spring Meeting in San Francisco, California"--P. ix. |
主题词:
|
Metal oxide semiconductors, Complementary |
主要责任者:
|
Ramanathan, Shriram. |
次要责任者:
|
Symposium J, "Materials and Devices for Beyond CMOS Scaling" |
索书号:
|
1 |