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中图分类法:
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TN305-532 版次： |
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题名:
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Impurity diffusion and gettering in silicon [ symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.] / , |
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出版发行:
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出版地： Cambridge 出版社： Cambridge University Press 出版日期： 2014 |
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载体形态:
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300 p 24 cm |
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附注:
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"Proceedings of the Symposium on Impurity Diffusion and Gettering in Semiconductors ... held as Symposium C at the Materials Research Society Meeting, November 27-30, 1984 in Boston"--Acknowledgments. |
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主题词:
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Semiconductors Defects |
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主题词:
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Diffusion |
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主题词:
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Semiconductor doping |
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主题词:
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Getters |
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主要责任者:
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Fair, Richard B. |
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主要责任者:
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Pearce, Charles W. |
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主要责任者:
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Washburn, Jack, |
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次要责任者:
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Symposium on Impurity Diffusion and Gettering in Semiconductors |
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索书号:
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1 |