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中图分类法:
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TN432 版次： |
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著者:
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Fossum, Jerry G., |
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题名:
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Fundamentals of ultra-thin-body MOSFETs and FinFETs / / , |
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载体形态:
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xvi, 210 pages : illustrations ; 26 cm |
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内容提要:
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"Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"-- |
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主题词:
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Metal oxide semiconductor field-effect transistors. |
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主题词:
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Integrated circuits Very large scale integration. |
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索书号:
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1 |