中图分类法:	TP3 版次：
著者:	Esseni, D.
题名:	Nanoscale MOS transistors : [ semi-classical transport and applications /] / ,
出版发行:	出版地： Cambridge ; 出版社： Cambridge University Press, 出版日期： 2011.
载体形态:	xvii, 470 p. : ill. ; 26 cm.
内容提要:	"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regi